Develop a half bridge driver IC with 600V pressure pressure

M817777FP's appearance: Mitsubishi Electric

In February 2022, Mitsubishi Electric develops high noise resistance by BSD with a high -pressure MOS structure in February 2022, developed a 600V -resistant half bridge driver "M817777FP" with a built -in BSD (Boot Strap Diode) function, sold on April 1. Start. The built -in BSD function can reduce the number of parts of the inverter system. The M817777FP has a built -in high -voltage diode (BSD) for boot strap circuits that produce other voltage from the reference voltage, reducing parts score and high -pressure wiring area. The BSD function is realized with a unique high -pressure MOS structure, and can suppress the leak current generated during charging operation. Further, a high -pressure MOS structure that does not form a parasitic element that causes malfunction when inverter switching is suppressed. M817777FP has 0 output current (representative value).2a / -0.35A, current consumption of low -side circuit is 1.0mA, the current consumption of the high -side circuit is 0.2ma.The package is supplied by 8 terminal SOP.Compatible with the external size, pin arrangement, and electrical characteristics so that it can be easily replaced from the conventional product "M81776FP".The sample price is 60 yen.

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